李薰研究奖
·李薰研究奖获奖资料
您现在的位置:首页 > 国际交流 > 李薰讲座系列 > 李薰研究奖 > 李薰研究奖获奖资料
David Tománek教授获得2014年度李薰材料科学讲座系列研究奖
 
2015-01-12 | 文章来源:李薰奖办公室        【 】【打印】【关闭

Topic: Progress in 2D electronic materials beyond graphene

Speaker: Professor David Tománek
   Physics and Astronomy Department, Michigan State University, USA

Time: 10:00-12:00, (Fri.) May 15th, 2015

Venue: Room 403, Shi Changxu Building, IMR CAS

Abstract:

Graphene monolayers have sparked off unprecedented interest due to their unique electronic structure, but will unlikely replace silicon electronics due to a vanishing fundamental band gap. To still realize the promise of 2D semiconductor electronics, scientists are turning to other layered materials with a nonzero band gap. In this respect, layered structures of group V elements are rapidly attracting interest. Few-layer phosphorus dubbed phosphorene combines high carrier mobility with an unprecedented tunability of the band gap [1-3]. Multiple allotropes of phosphorene, illustrated in Figure 1, may be synthesized by CVD and coexist within a monolayer with virtually no energy penalty to form grain boundaries [3]. Similar to graphene, phosphorene may form fullerenes and nanotubes [4]. There are countless possibilities to tile a phosphorene monolayer with different allotropes, providing the possibility of complex electronic structure patterning [5]. Similar intriguing electronic properties as found in phosphorene are postulated also for arsenene [6], a monolayer of gray arsenic. Computer simulations are a welcome means to gain microscopic insight into the physical properties and possible ways to synthesize these structures, as a guide to experimental efforts.

Reference

[1] David Tománek, 2014 symposium on phosphorene: An emerging 2D semiconductor, Mater. Express 4, 545 (2014).
[2] Han Liu, Adam T. Neal, Zhen Zhu, Zhe Luo, Xianfan Xu, David Tománek, and Peide D. Ye, ACS Nano 8, 4033 (2014).
[2] Zhen Zhu and David Tománek, Phys. Rev. Lett. 112, 176802 (2014).
[3] Jie Guan, Zhen Zhu, and David Tománek, Phys. Rev. Lett. 113, 046804 (2014).
[4] Jie Guan, Zhen Zhu, and David Tománek, Phys. Rev. Lett. 113, 226801 (2014).
[5] Jie Guan, Zhen Zhu, and David Tománek, ACS Nano 8, 12763 (2014).
[6] Zhen Zhu, Jie Guan, and David Tománek, Phys. Rev. B 91, 161404(R) (2015).

 

文档附件

相关信息
·李薰奖获得者、密歇根州立大学David Tománek教授访问金属所
联系我们 | 友情链接
地址: 沈阳市沈河区文化路72号 邮编: 110016
运维邮箱: office@imr.ac.cn
中国科学院金属研究所 版权所有 辽ICP备05005387号-1

官方微博

官方微信